Atmospheric Pressure Chemical Vapor Deposition
Key Facts
Abbreviation
APCVD
Pronunciation
/ˌætməsˈfɛrɪk ˈprɛʃər ˈkɛmɪkəl ˈveɪpər ˌdɛpəˈzɪʃən/
Category
Academic & Science
Related Field
Electronics
Examples in Context
- TiN films were deposited on glass substrates by atmospheric pressure chemical vapor deposition ( APCVD ) using titanium tetrachloride ( TiCl_4 ) and ammonia ( NH_3 ) as reactants, nitrogen ( N_2 ) as protective atmosphere and carrier gas in this paper.
- The paper put forward an aim to deposit titanium films and TiO_2 / SnO_2 : F multiple films prepared by the method of dielectric barrier discharge atmospheric pressure chemical vapor deposition ( DBD-CVD ).
- Structure and Hydrophilicity of Titanium Dioxide Film Prepared by Atmospheric Pressure Chemical Vapor Deposition(APCVD)
- Growth and Properties of TiN Films on Glass by Atmospheric Pressure Chemical Vapor Deposition(APCVD)
- The atmospheric pressure chemical vapor deposition ( APCVD ) technique has a great application potential to be a method to prepared the economical tin oxide films for its simple equipment, inexpensive and suitable for mass production.