Fowler Nordheim

Views Updated: Dec 15, 2025

Abbreviation

Pronunciation

/ˈfaʊ.lər ˈnɔːr.daɪm/

Typical field emission patterns of tungsten carbide thin film is observed, and its I V behavior and Fowler Nordheim(FN) plot is measured.
A method is proposed for measuring the effective electron mass in the gate oxide in a thin MOS structure by using the extrema of Fowler Nordheim(FN) tunneling current oscillations.
The field emission current density distribution over the tip surface was established using Fowler-Nordheim function, and the emission current over the single tip established by integrating the current density all over the single tip surface was 7 μ A.
Based on the Fowler-Nordheim tunneling theory, a model for carriers transport and recombine in organic bilayer light emitting diodes ( LEDs ) is presented.
The new memory cell is programmed by band to band tunneling induced hot electron ( BBHE ) injection method at the drain, and erased by Fowler Nordheim(FN) tunneling through the source region.

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