Ferroelectric Random Access Memory

Views Updated: Dec 15, 2025

Key Facts

Abbreviation
FRAM
Pronunciation
/ˌfer.əʊ.iːˈlek.trɪk ˌræn.dəm əkˈses ˈmem.ər.i/
Category
Academic & Science
Related Field
Electronics

Examples in Context

  1. Ferroelectric Films and Ferroelectric Random Access Memory(FRAM)
  2. Implementation of a Ferroelectric Capacitor in Ferroelectric Random Access Memory(FRAM)
  3. The data storage principle and applications in other relative trades of a new nonvolatile ferroelectric random access memory ( FRAM ), which has the characteristic of anti-HEMP ( high electromagnetic pulse ) and will not lose information or data when power off, are introduced in this paper.
  4. BIT-based ferroelectric thin films have excellent ferroelectric / dielectric properties and promising application prospect in non-volatile random access memory.
  5. Researchers now put more focus on non-volatile memory device, such as magnetic memory device, ferroelectric memory device, phase-transition memory device, and resistance random access memory.

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