Gate to Drain

Views Updated: Dec 15, 2025

Key Facts

Abbreviation
GD
Pronunciation
/geɪt tɪ dreɪn/
Category
Academic & Science
Related Field
Electronics

Examples in Context

  1. The saturation drain current at each gate bias decreased while the gate to drain breakdown voltage increased remarkably with the ( NH 4 ) 2S x treatment.
  2. The asymmetry isolation layer between the source / drain electrodes and the gate used in the experiment results in asymmetric mod-ulation of gate electrostatic field to source electrode and drain electrode. Therefore solo gate electrostatic field modulation to the drain electrode is realized.
  3. It may be concluded that DC transfer characteristics of high temperature CMOS inverter and gate circuits deteriorate due to reductions in carrier mobility and threshold voltages of MOSFETs and increase of leakage current of MOSFET's drain terminal pn junc-tion at high temperature.

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