Source Gate Drain
Key Facts
Abbreviation
SGD
Pronunciation
/sɔrs geɪt dreɪn/
Category
Miscellaneous
Related Field
Unclassified
Examples in Context
- The asymmetry isolation layer between the source / drain electrodes and the gate used in the experiment results in asymmetric mod-ulation of gate electrostatic field to source electrode and drain electrode. Therefore solo gate electrostatic field modulation to the drain electrode is realized.
- From the quoted equation for the current between source and drain Ids of the sub-threshold MOSFET, the expression for the voltage between gate and source drain Vgs of the sub-threshold MOSFET is directly got and the temperature characteristic of Vgs is theoretically analyzed.
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