Vapor Phase Epitaxy

Views Updated: Dec 15, 2025

Key Facts

Abbreviation
VPE
Pronunciation
/ˈveɪ.pər feɪz ˈɛp.ɪ.tɑː.ki/
Category
Academic & Science
Related Field
Electronics

Examples in Context

  1. Effect of nitridation on the properties of hydride vapor phase epitaxy ( HVPE ) grown GaN films was studied.
  2. The growth of single crystal AlN films by metal organic vapor phase epitaxy.
  3. The AlN films grown by low pressure metal organic vapor phase epitaxy are doped by Si thermal diffusion using Si and SiNx films as diffusion source, and the roles of Si doping on the electrical properties of AlN films.
  4. The influence of carrier gas ( i.e. N 2 ) flow rate on the optical properties of GaN epilayers on sapphire substrates grown by horizontal halide vapor phase epitaxy ( HVPE ) system was studied.
  5. Physical methods include evaporation and sputtering; Chemical methods mainly include molecule beam epitaxy ( MBE ), metal organic chemical vapor deposition ( MOCVD ), hydride vapor phase epitaxy ( HVPE ) and so on.

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