High Electron Mobility Transistor
Key Facts
Abbreviation
HEMT
Pronunciation
/haɪ ˌɪˈlɛktrɑn moʊˈbɪlɪti trænˈzɪstər/
Category
Academic & Science
Related Field
Electronics
Examples in Context
- High electron mobility transistor
- Based on the charge control theory, an accurate analytical model for the dc I V characteristics and small signal parameters of an AlGaN / GaN high electron mobility transistor ( HEMT ) is developed considering the effects of polarization and parasitic source drain resistances.
- High electron mobility transistors ( High Electron MobilityTransistor ) as a field-effect transistor, have been widely used in communications, electronics and other fields, it has the characteristics of high-power, low-noise, high-frequency, high-speed.
- The PHEMT ( pseudomorphic high electron mobility transistor ) device has outstanding high-frequency characteristics, power characteristics and low-noise characteristics, and it is one of the most competitions in the field of microwave and millimeter-wave monolithic integrated circuits.
- Development of Ka-Band High Electron Mobility Transistor(HEMT)