High Electron Mobility Transistors

Views Updated: Dec 15, 2025

Key Facts

Abbreviation
HEMT
Pronunciation
/haɪ ˌɪˈlɛktrɑn moʊˈbɪlɪti trænˈzɪstərz/
Category
Miscellaneous
Related Field
Unclassified

Examples in Context

  1. Considering the peculiarities of AlGaN / GaN high electron mobility transistors ( HEMTs ), a model of extracting parasitic and intrinsic parameters for HEMT's small signal equivalent circuit is presented.
  2. This article also discusses the electrical properties of zinc blende structure InN thin films and presents the potential application of InN thin films for devices ( mainly for high electron mobility transistors ).
  3. High electron mobility transistors ( High Electron MobilityTransistor ) as a field-effect transistor, have been widely used in communications, electronics and other fields, it has the characteristics of high-power, low-noise, high-frequency, high-speed.
  4. The multiple valued logic ( MVL ) circuits, which composed by resonant tunneling diodes ( RTD ) and high electron mobility transistors ( HEMT ), can complete definite logic functions with less devices. So the MVL circuits are simplified.
  5. It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro-optic modulators.

Other meanings of HEMT

High Electron Mobility Transistor Academic